Polishing apparatus

ABSTRACT

A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/808,252 filed Jul. 24, 2015, which is a divisional of U.S. patentapplication Ser. No. 13/330,881, filed Dec. 20, 2011, which claims thebenefit of Japanese Patent Application No. 2010-289209, filed Dec. 27,2010, the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to a polishing apparatus for polishing asurface of a substrate, such as a semiconductor wafer, and morespecifically to a polishing apparatus and a polishing method whichobtain a film-thickness distribution over the entire substrate surfaceincluding a central portion and a peripheral portion thereof duringpolishing of the substrate and control a load on the substrate based onthe film-thickness distribution.

Description of the Related Art

A CMP (chemical mechanical polishing) apparatus is widely known asequipment for polishing a surface of a substrate, such as asemiconductor wafer. This CMP apparatus polishes the surface of thesubstrate by pressing the substrate against a polishing pad on arotating polishing table while supplying a polishing liquid onto thepolishing pad. The CMP apparatus typically has a film-thicknessmeasuring device for measuring a film thickness or a signal equivalentto the film thickness. The CMP apparatus having such a film-thicknessmeasuring device controls a polishing load on the substrate based on ameasured value of the film thickness obtained from the film-thicknessmeasuring device and to determine a polishing end point. An eddy currentsensor or an optical sensor is generally used as the film-thicknessmeasuring device.

FIG. 1 is a plan view showing a positional relationship betweenfilm-thickness measuring device of a conventional CMP apparatus andsubstrate. A film-thickness measuring device 100 is provided in apolishing table 102 so as to face a substrate W on a polishing pad 105.The film-thickness measuring device 100 measures the film thickness atmultiple measuring points on the substrate W while moving across thesubstrate W each time the polishing table 102 rotates. In theconventional CMP apparatus, the film-thickness measuring device 100 isarranged so as to pass through the center of the substrate W, as shownin FIG. 1. This is for the purpose of measuring the film thickness atmultiple measuring points distributed in a radial direction of thesubstrate W, as shown in FIG. 2.

There exist microcircuit patterns on the surface of the substrate to bepolished. In some regions on the substrate, the existence of suchcircuit patterns could cause a difference in obtained data indicatingthe film thickness (e.g., voltage value or current value in the case ofusing the eddy current sensor, relative reflectance in the case of usingthe optical sensor) even when the film thickness is the same. Thus, inorder to avoid such an influence of the circuit patterns, smoothing isperformed on the data.

The CMP apparatus determines the polishing loads on multiple regions(e.g., a central portion, an intermediate portion, a peripheral portion)of the substrate based on a film-thickness profile obtained duringpolishing and polishes the substrate so as to make the film thicknessuniform. However, in the conventional CMP apparatus, an accurate filmthickness cannot be obtained in the peripheral portion of the substratebecause of the smaller number of measuring points on this portion. Thisproblem will be explained with reference to FIG. 2. FIG. 2 is a viewshowing measuring points on the substrate at which film-thicknessmeasurement is performed while the polishing table makes one revolution.The peripheral portion of the substrate is an outermost annular portionhaving a width ranging from 10 mm to 20 mm. Because of its narrow width,the number of measuring points on the peripheral portion is small, ascan be seen from FIG. 2.

The peripheral portion of the substrate is most likely to be affected bythe polishing load and the polishing liquid, and therefore the filmthickness is likely to vary greatly during polishing as compared withother regions. Moreover, an initial film thickness in the peripheralportion of the substrate is, in many cases, larger than that in otherregions. Thus, it is necessary to accurately measure and monitor thefilm thickness in the peripheral portion during polishing of thesubstrate. However, as described above, it is difficult to obtain anaccurate film thickness in the peripheral portion because of the smallernumber of measuring points on this portion.

FIG. 3 is a graph showing a change in the measured value of the filmthickness in the central portion of the substrate and a change in themeasured value of the film thickness in the peripheral portion of thesubstrate. In FIG. 3, a vertical axis represents measured value(estimated value) of the film thickness obtained by the optical sensor,and a horizontal axis represents polishing time. As can be seen fromFIG. 3, the film thickness in the central portion (see FIG. 2) of thesubstrate decreases gradually with the polishing time, while the filmthickness in the peripheral portion (see FIG. 2) varies irregularly.This is because the small number of measuring points in the peripheralportion cannot provide sufficient data for the smoothing. In particular,when the polishing table rotates at a high speed, the number ofmeasuring points in the peripheral portion becomes even smaller.

As described above, it is difficult to obtain highly-accuratefilm-thickness data in the peripheral portion of the substrate, andconsequently a highly-accurate film-thickness profile of the substratecannot be obtained during polishing. As a result, it has been difficultto obtain a desired film-thickness profile through feedback of thefilm-thickness profile to the polishing load.

SUMMARY OF THE INVENTION

The present invention has been made in view of the above drawback. It istherefore an object of the present invention to provide a polishingapparatus and a polishing method capable of obtaining highly-accuratefilm-thickness data over a substrate surface in its entirety including acentral portion and a peripheral portion.

One aspect of the present invention for achieving the above object is toprovide an apparatus for polishing a substrate having a film thereon bybringing the substrate into sliding contact with a polishing pad. Theapparatus includes: a rotatable polishing table for holding thepolishing pad; a top ring configured to hold the substrate and to pressa surface of the substrate against the polishing pad; at least one lightsource configured to emit light; a first optical head configured toapply the light to the surface of the substrate and to receive reflectedlight from the substrate; a second optical head configured to apply thelight to the surface of the substrate and to receive reflected lightfrom the substrate; at least one spectroscope configured to measure ateach wavelength an intensity of the reflected light received by thefirst optical head and the second optical head; and a processorconfigured to produce a spectrum from the intensity of the reflectedlight at each wavelength measured by the spectroscope and to determine athickness of the film of the substrate from the spectrum produced. Thespectrum indicates a relationship between intensity and wavelength ofthe reflected light. The first optical head is arranged so as to face acenter of the substrate held by the top ring, and the second opticalhead is arranged so as to face a peripheral portion of the substrateheld by the top ring.

In a preferred aspect of the present invention, the second optical headis located outwardly of the first optical head with respect to a radialdirection of the polishing table.

In a preferred aspect of the present invention, the second optical headis located inwardly of the first optical head with respect to a radialdirection of the polishing table.

In a preferred aspect of the present invention, the first optical headand the second optical head are located at different positions withrespect to a circumferential direction of the polishing table.

In a preferred aspect of the present invention, a line connecting thefirst optical head to the center of the polishing table and a lineconnecting the second optical head to the center of the polishing tablemeet at an angle of substantially 180 degrees.

In a preferred aspect of the present invention, the second optical headis located outwardly of the polishing table.

In a preferred aspect of the present invention, the apparatus furtherincludes a controller for determining load on the substrate. The topring has a mechanism configured to press a central portion and theperipheral portion of the substrate independently against the polishingpad, and the controller is configured to determine loads of the top ringon the central portion and the peripheral portion based on a filmthickness at the central portion and a film thickness at the peripheralportion.

Another aspect of the present invention is to provide an apparatus forpolishing a substrate having a film thereon by bringing the substrateinto sliding contact with a polishing pad. The apparatus include: arotatable polishing table for holding the polishing pad; a top ringconfigured to hold the substrate and to press a surface of the substrateagainst the polishing pad; and a first film-thickness sensor and asecond film-thickness sensor each configured to measure a thickness ofthe film of the substrate. The first film-thickness sensor is arrangedso as to face a center of the substrate held by the top ring, and thesecond film-thickness sensor is arranged so as to face a peripheralportion of the substrate held by the top ring.

Still another aspect of the present invention is to provide a method ofpolishing a substrate having a film thereon by bringing the substrateinto sliding contact with a polishing pad. The method includes: rotatinga polishing table holding the polishing pad; pressing a surface of thesubstrate against the rotating polishing pad; applying light to thesurface of the substrate from a first optical head arranged so as toface a center of the substrate and receiving reflected light from thesubstrate by the first optical head; applying light to the surface ofthe substrate from a second optical head arranged so as to face aperipheral portion of the substrate and receiving reflected light fromthe substrate by the second optical head; measuring at each wavelengthan intensity of the reflected light received by the first optical headand the second optical head; producing a spectrum from the measuredintensity, the spectrum indicating a relationship between intensity andwavelength of the reflected light; and determining a thickness of thefilm of the substrate from the spectrum.

In a preferred aspect of the present invention, the first optical headand the second optical head apply the light to the surface of thesubstrate and receive the reflected light from the substrate atdifferent times.

In a preferred aspect of the present invention, the first optical headand the second optical head apply the light to the surface of thesubstrate and receive the reflected light from the substrate alternatelyat substantially constant time intervals.

In a preferred aspect of the present invention, the peripheral portionof the substrate is an outermost annular portion of the substrate, and awidth of the peripheral portion is in a range of 10 mm to 20 mm.

According to the present invention, the tip of the second optical headmoves along the peripheral portion of the substrate with the rotation ofthe polishing table. Therefore, the number of measuring points on theperipheral portion is increased, so that more highly accurate filmthickness can be obtained. As a result, a highly-accurate film-thicknessprofile (i.e., a film-thickness distribution along the radial directionof the substrate) can be created during polishing, and a desiredfilm-thickness profile can be obtained based on the createdfilm-thickness profile.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view showing a positional relationship betweenfilm-thickness measuring device of a conventional CMP apparatus andsubstrate;

FIG. 2 is a view showing measuring points on the substrate at whichfilm-thickness measurement is performed while a polishing table makesone revolution;

FIG. 3 is a graph showing a change in measured value of the filmthickness in a central portion of the substrate and a change in measuredvalue of the film thickness in a peripheral portion of the substrate;

FIG. 4A is a schematic view showing the principle of determining a filmthickness based on a spectrum of a reflected light from a substrate;

FIG. 4B is a plan view showing a positional relationship between thesubstrate and a polishing table;

FIG. 5 is a graph showing spectra of the reflected light obtained byperforming a polishing simulation on the substrate shown in FIG. 4Abased on the theory of interference of light;

FIG. 6 is a cross-sectional view schematically showing a polishingapparatus according to an embodiment of the present invention;

FIG. 7 is a plan view showing arrangement of a first optical head havinga first light-applying unit and a first light-receiving unit and asecond optical head having a second light-applying unit and a secondlight-receiving unit;

FIG. 8 is a view showing paths of a tip of the second optical headdescribed on a surface of the substrate;

FIG. 9 is an example of a film-thickness profile produced by aprocessor;

FIG. 10 is a cross-sectional view showing an example of a top ringhaving a pressing mechanism for pressing plural regions of the substrateindependently;

FIG. 11 is a diagram showing film-thickness profiles;

FIG. 12 is a plan view showing another example of arrangement of thefirst optical head and the second optical head;

FIG. 13 is a view showing paths of the tip of the second optical headshown in FIG. 12;

FIG. 14 is a plan view showing still another example of arrangement ofthe first optical head and the second optical head;

FIG. 15 is a view showing an example in which a common spectroscope anda common light source are provided for the first optical head and thesecond optical head;

FIG. 16 is a plan view showing still another example of arrangement ofthe first optical head and the second optical head;

FIG. 17 is a plan view showing still another example of arrangement ofthe first optical head and the second optical head;

FIG. 18 is a plan view showing still another example of arrangement ofthe first optical head and the second optical head;

FIG. 19 is a plan view showing an example in which a third optical headis provided in addition to the first optical head and the second opticalhead;

FIG. 20 is a plan view showing another example of arrangement of thefirst optical head, the second optical head, and the third optical head;

FIG. 21 is a plan view showing still another example of arrangement ofthe first optical head, the second optical head, and the third opticalhead;

FIG. 22 is a plan view showing still another example of arrangement ofthe first optical head, the second optical head, and the third opticalhead;

FIG. 23 is a plan view showing another example of arrangement of thesecond optical head;

FIG. 24 is a plan view showing still another example of arrangement ofthe second optical head; and

FIG. 25 is a cross-sectional view showing a modified example of thepolishing apparatus shown in FIG. 6.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Embodiments of the present invention will be described below withreference to the drawings. FIG. 4A is a schematic view showing theprinciple of determining a film thickness based on a spectrum of areflected light from a substrate, and FIG. 4B is a plan view showing apositional relationship between the substrate and a polishing table. Asshown in FIG. 4A, a substrate W, to be polished, has an underlying layer(e.g., a silicon layer) and a film (e.g., a dielectric film, such asSiO₂, having a property of light permeability) formed on the underlyinglayer. A surface of the substrate W is pressed against a polishing pad22 on a rotating polishing table 20, so that the film of the substrate Wis polished by sliding contact with the polishing pad 22.

A light-applying unit 11 and a light-receiving unit 12 are arranged soas to face the surface of the substrate W. The light-applying unit 11 iscoupled to a light source 16, and light emitted by the light source 16is directed to the surface of the substrate W by the light-applying unit11. The light-applying unit 11 applies the light in a directionsubstantially perpendicular to the surface of the substrate W, and thelight-receiving unit 12 receives the reflected light from the substrateW. The light emitted by the light source 16 is multi-wavelength light.As shown in FIG. 4B, the light is applied to the surface of thesubstrate W each time the polishing table 20 makes one revolution. Aspectroscope 14 is coupled to the light-receiving unit 12. Thisspectroscope 14 is configured to disperse the reflected light accordingto wavelength and to measure the intensity of the reflected light ateach wavelength.

A processor 15 is coupled to the spectroscope 14. This processor 15 isconfigured to read measurement data obtained by the spectroscope 14 andto produce intensity distribution of the reflected light from themeasured values of the light intensity. More specifically, the processor15 produces a spectrum (spectral profile) which indicates the lightintensity at each of the wavelengths. This spectrum is expressed as aline graph indicating a relationship between wavelength and intensity ofthe reflected light. The processor 15 is further configured to determinethe film thickness of the substrate W from the spectrum and to determinea polishing end point. A general-purpose computer or a dedicatedcomputer can be used as the processor 15. The processor 15 performspredetermined processing steps according to a program (or computersoftware).

FIG. 5 is a graph showing spectra of the reflected light obtained byperforming a polishing simulation on the substrate shown in FIG. 4Abased on the theory of interference of light. In FIG. 5, a horizontalaxis represents wavelength of light, and a vertical axis representsrelative reflectance derived from the intensity of the light. Therelative reflectance is an index that indicates the intensity of light.More specifically, the relative reflectance is a ratio of the intensityof the reflected light to a predetermined reference intensity. Bydividing the intensity of the reflected light (i.e., the actuallymeasured intensity) by the predetermined reference intensity, noisecomponents are removed and therefore intensity of the light with nonoise can be obtained. The predetermined reference intensity may be anintensity of the reflected light obtained when polishing a silicon waferwith no film thereon in the presence of water. Instead of the relativereflectance, the intensity of the light may be used as it is.

The spectrum is an arrangement of the light intensity in the order ofwavelength and indicates the light intensity at each wavelength. Thespectrum varies depending on the film thickness. This phenomenon is dueto interference between light waves. Specifically, the light, applied tothe substrate, is reflected off an interface between a medium (e.g.,water) and the film and an interface between the film and the underlyinglayer beneath the film. The light waves from these interfaces interferewith each other. The manner of interference between the light wavesvaries according to the thickness of the film (i.e., a length of anoptical path). As a result, the spectrum of the reflected light from thesubstrate varies depending on the thickness of the film, as shown inFIG. 5.

The processor 15 determines the film thickness from the spectrumobtained. A known technique can be used for determining the filmthickness from the spectrum. For example, there is a method ofestimating a film thickness by comparing a spectrum obtained duringpolishing (i.e., an actually measured spectrum) with prepared referencespectra, as disclosed in Japanese laid-open patent publication No.2009-505847. This method includes the steps of comparing the spectrum ateach point of time during polishing with the plural reference spectraand determining a film thickness from a reference spectrum whose shapeis most similar to the shape of the measured spectrum. The pluralreference spectra are prepared in advance by polishing a substrate thatis identical or similar to the substrate to be polished. Each referencespectrum is associated with a film thickness at a point of time whenthat reference spectrum is obtained. Therefore, the current filmthickness can be estimated from the reference spectrum having a shapethat is most similar to that of the spectrum obtained during polishing.

The processor 15 is coupled to a controller 19 for determining polishingconditions, such as a polishing load on the substrate. The spectrumcreated by the processor 15 is sent to the controller 19, which thendetermines an optimum polishing load for achieving a targetfilm-thickness profile based on the spectrum obtained during polishingand controls the polishing load on the substrate, as will be describedlater.

FIG. 6 is a cross-sectional view schematically showing a polishingapparatus according to an embodiment of the present invention. Thepolishing apparatus includes the polishing table 20 for supporting thepolishing pad 22 thereon, a top ring 24 configured to hold the substrateW and to press the substrate W against the polishing pad 22, and apolishing liquid supply mechanism 25 configured to supply a polishingliquid (slurry) onto the polishing pad 22. The polishing table 20 iscoupled to a motor (not shown in the drawing) provided below thepolishing table 20, so that the polishing table 20 can rotate about itsown axis. The polishing pad 22 is secured to an upper surface of thepolishing table 20.

The polishing pad 22 has an upper surface 22 a, which provides apolishing surface for polishing the substrate W. The top ring 24 iscoupled to a motor and an elevating cylinder (not shown in the drawing)via a top ring shaft 28. With these configurations, the top ring 24 canmove in the vertical direction and can rotate about the top ring shaft28. The top ring 24 has a lower surface which is configured to hold thesubstrate W by a vacuum suction or the like.

The substrate W, held on the lower surface of the top ring 24, isrotated by the top ring 24, and is pressed by the top ring 24 againstthe polishing pad 22 on the rotating polishing table 20. Simultaneously,the polishing liquid is supplied onto the polishing surface 22 a of thepolishing pad 22 from the polishing liquid supply mechanism 25. Thesurface of the substrate W is polished in the presence of the polishingliquid between the surface of the substrate W and the polishing pad 22.A relative movement mechanism for providing sliding contact between thesubstrate W and the polishing pad 22 is constructed by the polishingtable 20 and the top ring 24.

The polishing table 20 has holes 30A and 30B whose upper ends lying inthe upper surface of the polishing table 20. The polishing pad 22 hasthrough-holes 31A and 31B at positions corresponding to the holes 30Aand 30B, respectively. The hole 30A and the through-hole 31A are influid communication with each other, and the hole 30B and thethrough-hole 31B are in fluid communication with each other. Upper endsof the through-holes 31A and 31B lie in the polishing surface 22 a. Thehles 30A and 30B are coupled to a liquid supply source 35 via a liquidsupply passage 33 and a rotary joint 32. During polishing, the liquidsupply source 35 supplies water (preferably pure water) as a transparentliquid into the holes 30A and 30B. The water fills spaces formed by thelower surface of the substrate W and the through-holes 31A and 31B, andis expelled therefrom through a liquid discharge passage 34. Thepolishing liquid in the through-holes 31A and 31B is discharged togetherwith the water and thus a path of the light is secured. The liquidsupply passage 33 is provided with a valve (not shown in the drawing)configured to operate in conjunction with the rotation of the polishingtable 20. The valve operates so as to stop the flow of the water orreduce the flow of the water when the substrate W is not located overthe through-holes 31A and 31B.

The polishing apparatus has an optical film-thickness measuring devicefor measuring the film thickness according to the above-describedmethod. This optical film-thickness measuring device includes lightsources 16 a and 16 b for emitting light, a first light-applying unit 11a configured to direct the light, emitted by the light source 16 a, tothe surface of the substrate W, a first light-receiving unit 12 aconfigured to receive the reflected light from the substrate W, a secondlight-applying unit 11 b configured to direct the light, emitted by thelight source 16 b, to the surface of the substrate W, a secondlight-receiving unit 12 b configured to receive the reflected light fromthe substrate W, spectroscopes 14 a and 14 b configured to disperse (orbreak) the reflected light according to the wavelength and to measurethe intensity of the reflected light over a predetermined wavelengthrange, and the processor 15 configured to produce the spectrum from themeasurement data obtained by the spectroscopes 14 a and 14 b and todetermine the film thickness of the substrate W based on the spectrum.The spectrum indicates light intensities distributed over thepredetermined wavelength range and indicates a relationship betweenintensity and wavelength of the light.

The first light-applying unit 11 a, the first light-receiving unit 12 a,the second light-applying unit 11 b, and the second light-receiving unit12 b are each constructed by optical fiber. The first light-applyingunit 11 a and the first light-receiving unit 12 a constitute a firstoptical head (i.e., an optical film-thickness measuring head) 13A, andthe second light-applying unit 11 b and the second light-receiving unit12 b constitute a second optical head (i.e., an optical film-thicknessmeasuring head) 13B. The first light-applying unit 11 a is coupled tothe light source 16 a, and the second light-applying unit 11 b iscoupled to the light source 16 b. The first light-receiving unit 12 a iscoupled to the spectroscope 14 a, and the second light-receiving unit 12b is coupled to the spectroscope 14 b.

A light emitting diode (LED), a halogen lamp, a xenon flash lamp, or thelike, which emits multi-wavelength light, can be used for the lightsources 16 a and 16 b. The first light-applying unit 11 a, the firstlight-receiving unit 12 a, the second light-applying unit 11 b, thesecond light-receiving unit 12 b, the light sources 16 a and 16 b, andthe spectroscopes 14 a and 14 b are provided in the polishing table 20and are rotated together with the polishing table 20. The firstlight-applying unit 11 a and the first light-receiving unit 12 a arelocated in the hole 30A formed in the polishing table 20, and tips ofthe first light-applying unit 11 a and the first light-receiving unit 12a are adjacent to the surface, to be polished, of the substrate W.Similarly, the second light-applying unit 11 b and the secondlight-receiving unit 12 b are located in the hole 30B formed in thepolishing table 20, and tips of the second light-applying unit 11 b andthe second light-receiving unit 12 b are adjacent to the surface, to bepolished, of the substrate W.

The first light-applying unit 11 a and the first light-receiving unit 11a are arranged perpendicularly to the surface of the substrate W, sothat the first light-applying unit 11 a applies the light to the surfaceof the substrate W perpendicularly. Similarly, the second light-applyingunit 11 b and the second light-receiving unit 12 b are arrangedperpendicularly to the surface of the substrate W, so that the secondlight-applying unit 11 b applies the light to the surface of thesubstrate W perpendicularly.

The first light-applying unit 11 a and the first light-receiving unit 12a are arranged so as to face the center of the substrate W held by thetop ring 24. Therefore, as shown in FIG. 4B, each time the polishingtable 20 rotates, the tips of the first light-applying unit 11 a and thefirst light-receiving unit 12 a move across the substrate W and thelight is applied to regions including the center of the substrate W.This is for the purpose of measuring the film thickness over the entiresurface of the substrate W, including a central portion of the substrateW, through the first light-applying unit 11 a and the firstlight-receiving unit 12 a passing through the center of the substrate W.The processor 15 can therefore produce a film-thickness profile (i.e., afilm-thickness distribution) based on the film thickness data measured.

The second light-applying unit 11 b and the second light-receiving unit12 b are arranged so as to face a peripheral portion of the substrate Wheld by the top ring 24. The tips of the second light-applying unit 11 band the second light-receiving unit 12 b move along the peripheralportion of the substrate W each time the polishing table 20 rotates.Therefore, the light is applied to the peripheral portion of thesubstrate W each time the polishing table 20 rotates.

During polishing, the substrate W is irradiated with the light from thefirst light-applying unit 11 a and the second light-applying unit 11 b.The light from the first light-applying unit 11 a is reflected off thesurface of the substrate W, and the reflected light is received by thefirst light-receiving unit 12 a. The light from the secondlight-applying unit 11 b is reflected off the surface of the substrateW, and the reflected light is received by the second light-receivingunit 12 b. While the substrate W is irradiated with the light, the wateris supplied into the hole 30A and the through-hole 31A, so that thespace formed between the surface of the substrate W and the respectivetips of the first light-applying unit 11 a and first light-receivingunit 12 a is filled with the water. Similarly, while the substrate W isirradiated with the light, the water is supplied into the hole 30B andthe through-hole 31B, so that the space formed between the surface ofthe substrate W and the respective tips of the second light-applyingunit 11 b and second light-receiving unit 12 b is filled with the water.

The spectroscope 14 a is configured to disperse the reflected light sentfrom the first light-receiving unit 12 a according to wavelength and tomeasure the intensity of the reflected light at each wavelength.Similarly, the spectroscope 14 b is configured to disperse the reflectedlight sent from the second light-receiving unit 12 b according towavelength and to measure the intensity of the reflected light at eachwavelength. The processor 15 creates the spectrum from the intensity ofthe reflected light measured by the spectroscope 14 a and thespectroscope 14 b. The spectrum shows a relationship between theintensity and the wavelength of the reflected light. Further, theprocessor 15 determines the current film thickness of the substrate Wusing the previously-described known technique.

FIG. 7 is a plan view of arrangement of the first optical head 13Ahaving the first light-applying unit 11 a and the first light-receivingunit 12 a and the second optical head 13B having the secondlight-applying unit 11 b and the second light-receiving unit 12 b. Asshown in FIG. 7, the center of the substrate W is located on a path ofthe first optical head 13A, and the peripheral portion of the substrateW is located on a path of the second optical head 13B. As can be seenfrom FIG. 7, the second optical head 13B moves across only theperipheral portion of the substrate W and its travelling direction isapproximately in the circumferential direction of the substrate W.

The first optical head 13A and the second optical head 13B are arrangedalong the radial direction of the polishing table 20. Therefore, a lineconnecting the first optical head 13A to the center O of the polishingtable 20 and a line connecting the second optical head 13B to the centerO of the polishing table 20 meet at an angle of 0 degree. The secondoptical head 13B is located outwardly of the first optical head 13A withrespect to the radial direction of the polishing table 20. Specifically,a distance between the second optical head 13B and the center O of thepolishing table 20 is longer than a distance between the first opticalhead 13A and the center O of the polishing table 20.

FIG. 8 is a view showing the paths of the tip of the second optical head13B described on the surface of the substrate W. More specifically, FIG.8 shows the paths of the second optical head 13B when the polishingtable 20 makes two revolutions. As can be seen from FIG. 8, the secondoptical head 13B moves along the peripheral portion of the substrate Was the polishing table 20 rotates. As a result, the number of measuringpoints on the peripheral portion becomes larger than the number ofmeasuring points shown in FIG. 2 in the conventional CMP apparatus.Therefore, the film thickness in the peripheral portion of the substrateW can be determined accurately from the larger number of measurementdata.

In this specification, the peripheral portion of the substrate is anoutermost annular portion of the substrate, as shown in FIG. 8, and awidth thereof is in the range of 10 mm to 20 mm. For example, in thecase of a substrate having a diameter of 300 mm, the width of theannular peripheral portion is about 10 mm. The peripheral portion is aregion where devices are formed. The peripheral portion of the substrateis most likely to be affected by the polishing load and the polishingliquid during polishing, and therefore the film thickness is likely tovary greatly during polishing as compared with other regions. Therefore,highly-accurate monitoring of the film thickness is required duringpolishing.

The substrate W is polished by the sliding contact between the substrateW and the polishing pad 22 and by chemical action of the polishingliquid. Therefore, portions of the polishing pad 22 where the firstoptical head 13A and the second optical head 13B are provided do notcontribute to polishing of the substrate W. As can be seen from FIG. 8,the second optical head 13B passes through only the peripheral portionof the substrate W and does not pass through other portions. Therefore,the influence of the second optical head 13B on the substrate polishingcan be minimized.

In the case where the polishing table 20 has a larger diameter than thatof the substrate W, the slower the polishing table 20 rotates, thelonger time it takes for the second optical head 13B to pass through thesubstrate W. Therefore, for example, the polishing table 20 may rotateat a speed of 50 min⁻¹ or less during polishing of the substrate W.Alternatively, the rotational speed of the polishing table 20 may belowered to less than a preset rotational speed in predetermined timeintervals during polishing of the substrate W.

In in-situ measurement in which the film thickness is measured duringpolishing of the substrate, the polishing liquid may affect themeasurement of the film thickness. In particular, in the opticalfilm-thickness measuring device, the light may be blocked by thepolishing liquid and as a result highly-accurate measurement may not beperformed. Thus, in order to remove the influence of the polishingliquid on the film-thickness measurement, pure water may be suppliedonto the polishing pad 22 regularly while the substrate is polished(i.e., water-polished) and the film thickness of the substrate may bemeasured during supply of the pure water.

The processer 15 produces the film-thickness profile from a combinationof the film-thickness values obtained through the first optical head 13Aand the film-thickness values obtained through the second optical head13B. FIG. 9 is an example of the film-thickness profile produced by theprocessor 15. As shown in FIG. 9, the film-thickness profile is composedof a large number of film-thickness values that have been determined bythe processer 15. The film-thickness values (indicated by Δ) obtainedusing the first optical head 13A are allotted to portions other than theperipheral portion of the substrate W, and the film-thickness values(indicated by ◯) obtained using the second optical head 13B are allottedto the peripheral portion of the substrate W. In this manner, thefilm-thickness values obtained through the second optical head 13B areused to create a part of the film-thickness profile corresponding to theperipheral portion of the substrate W. Therefore, the processer 15 canproduce the highly-accurate film-thickness profile from the center tothe peripheral portion of the substrate W.

The film-thickness profile is a film-thickness distribution thatindicates a film thickness in each region of the substrate W. Byadjusting the polishing load on each region of the substrate duringpolishing, a desired film-thickness profile or a desired polishingprofile (i.e., a profile indicating a distribution of amounts of filmremoved) can be obtained. The top ring 24 has a mechanism capable ofindependently pressing plural regions (including the central portion andthe peripheral portion) of the substrate W. The top ring 24 having sucha mechanism will be described below with reference to FIG. 10.

FIG. 10 is a cross-sectional view showing an example of the top ring 24having the pressing mechanism for pressing plural regions of thesubstrate independently. The top ring 24 has a top ring body 51 coupledto the top ring shaft 28 via a universal joint 50, and a retainer ring52 provided on a lower portion of the top ring body 51. The top ring 24further has a circular flexible membrane 56 to be brought into contactwith the substrate W, and a chucking plate 57 that holds the membrane56. The membrane 56 and the chucking plate 57 are disposed below the topring body 51. Four pressure chambers (air bags) P1, P2, P3, and P4 areprovided between the membrane 56 and the chucking plate 57. The pressurechambers P1, P2, P3, and P4 are formed by the membrane 56 and thechucking plate 57. The central pressure chamber P1 has a circular shape,and the other pressure chambers P2, P3, and P4 have an annular shape.These pressure chambers P1, P2, P3, and P4 are in a concentricarrangement.

Pressurized fluid (e.g., pressurized air) is supplied into the pressurechambers P1, P2, P3, and P4 or vacuum is developed in the pressurechambers P1, P2, P3, and P4 by a pressure-adjusting device 70 throughfluid passages 61, 62, 63, and 64, respectively. The pressures in thepressure chambers P1, P2, P3, and P4 can be changed independently tothereby independently adjust loads on four regions of the substrate W:the central portion, an inner intermediate portion, an outerintermediate portion, and the peripheral portion. Further, by elevatingor lowering the top ring 24 in its entirety, the retainer ring 52 canpress the polishing pad 22 at a predetermined load.

A pressure chamber P5 is formed between the chucking plate 57 and thetop ring body 51. Pressurized fluid is supplied into the pressurechamber PS or vacuum is developed in the pressure chamber P5 by thepressure-adjusting device 70 through a fluid passage 65. With thisoperation, the chucking plate 57 and the membrane 56 in their entiretycan move up and down. The retainer ring 52 is arranged around thesubstrate W so as to prevent the substrate W from coining off the topring 24 during polishing. The membrane 56 has an opening in a portionthat forms the pressure chamber P3, so that the substrate W can be heldby the top ring 24 via the vacuum suction by producing vacuum in thepressure chamber P3. Further, the substrate W can be released from thetop ring 24 by supplying nitrogen gas or clean air into the pressurechamber P3.

The pressure-adjusting device 70 is coupled to the controller 19. Thepolishing loads on the respective portions of the substrate W, i.e., theinternal pressures of the pressure chambers P1, P2, P3, and P4, aredetermined by the controller 19. The controller 19 is coupled to theabove-described processor 15, and the film-thickness profile produced bythe processor 15 is sent to the controller 19. The controller 19controls the internal pressures of the pressure chambers P1, P2, P3, andP4 through the pressure-adjusting device 70. Specifically, thecontroller 19 determines target internal pressures of the pressurechambers P1, P2, P3, and P4 such that the film-thickness profileobtained during polishing coincides with a target film-thicknessprofile, and sends command signals of the target internal pressures tothe pressure-adjusting device 70. The pressure-adjusting device 70 thenadjusts the internal pressures of the pressure chambers P1, P2, P3, andP4 based on the command signals sent from the controller 19. With theseoperations, the top ring 24 can press the respective portions of thesubstrate W at optimum loads, respectively. It is also possible tocontrol an internal pressure of only one of the pressure chambers (e.g.,the internal pressure of the pressure chamber P4 corresponding to theperipheral portion of the substrate W) based on the film-thicknessprofile obtained. In this embodiment, the second optical head 13B isarranged in a position corresponding to the pressure chamber P4.

FIG. 11 is a diagram showing a film-thickness profile at a polishinginitial stage, a target film-thickness profile, a film-thickness profilewhen polishing a substrate while performing a feedback control of thepolishing loads based on the film-thickness profile obtained duringpolishing, and a film-thickness profile when polishing a substratewithout performing the feedback control. The diagram of FIG. 11 showspolishing results of the substrate having an initial film-thicknessprofile in which the film in the peripheral portion is thicker than thefilm in the other portions. As can be seen from FIG. 11, as a result ofpolishing the substrate while performing the feedback control of thepolishing loads based on the film-thickness profile, a film-thicknessprofile that is similar to the target film-thickness profile isobtained. In contrast, when the feedback control is not performed, adesired film-thickness profile is not obtained.

In general, the same type of substrate is polished under the samepolishing conditions. However, since the polishing pad 22 and theretainer ring 52 of the top ring 24, which are consumables of thepolishing apparatus, wear away gradually with the polishing time, thefilm-thickness profile obtained varies gradually even under the sameconditions. Such a variation in the film-thickness profile is remarkableparticularly in the peripheral portion of the substrate. This is becausethe polishing load tends to concentrate on the peripheral portion of thesubstrate and this peripheral portion is likely to be subject to theinfluence of the wear of the retainer ring 52 and the polishing pad 22.According to the above-described embodiment, because the film thicknessin the peripheral portion of the substrate can be measured accurately,polishing error due to the wear of the polishing pad 22 and/or theretainer ring 52 can be detected. Specifically, the wear of thepolishing pad 22 and/or the retainer ring 52 can be detected based on achange with time in the film thickness in the peripheral portion of thesubstrate. For example, if a desired film thickness cannot be achievedeven wider the same polishing conditions, then it can be judged that thepolishing pad 22 and/or the retainer ring 52 has worn away. In thismanner, the film-thickness measurement data at the peripheral portion ofthe substrate can be used not only for the real-time feedback control ofthe polishing load on the substrate, but also for the wear detection ofthe consumables, such as the polishing pad 22 and the retainer ring 52.

FIG. 12 is a plan view showing another example of arrangement of thefirst optical head 13A and the second optical head 13B. The arrangementof the first optical head 13A and the second optical head 13B shown inFIG. 12 is basically the same as the arrangement shown in FIG. 7, butdiffers in that the second optical head 13B is closer to the center O ofthe polishing table 20 than the first optical head 13A is. Specifically,in the example shown in FIG. 12, the second optical head 13B is locatedinwardly of the first optical head 13A with respect to the radialdirection of the polishing table 20. As a result, a distance between thesecond optical head 13B and the center O of the polishing table 20 isshorter than a distance between the first optical head 13A and thecenter O of the polishing table 20.

FIG. 13 is a view showing paths of the second optical head 13B shown inFIG. 12, and more specifically shows the paths of the second opticalhead 13B when the polishing table 20 makes two revolutions. As can beseen from FIG. 13, the second optical head 13B moves along theperipheral portion of the substrate W as the polishing table 20 rotates.Therefore, the film thickness in the peripheral portion can be measuredat more measuring points. Furthermore, as can be seen from thecomparison between the paths shown in FIG. 8 and the paths shown in FIG.13, the path of the second optical head 13B shown in FIG. 13 is longerthan the path of the second optical head 13B shown in FIG. 8. Therefore,with the arrangement shown in FIG. 12, the film thickness in theperipheral portion can be measured at more measuring points. On theother hand, since the second optical head 13B does not contribute topolishing of the substrate W, it is preferable that the path of thesecond optical head 13B be short, from the standpoint of improvement ofa polishing rate (i.e., a removal rate of the film). While thearrangement shown in FIG. 7 provides slightly less measuring points inthe peripheral portion of the substrate W as compared with thearrangement shown in FIG. 12, the arrangement shown in FIG. 7 ispreferable from the standpoint of improvement of a polishingperformance.

FIG. 14 is a plan view showing still another example of arrangement ofthe first optical head 13A and the second optical head 13B. As shown inFIG. 14, the first optical head 13A and the second optical head 13B arelocated at opposite sides with respect to the center O of the polishingtable 20. More specifically, a line connecting the first optical head13A to the center O of the polishing table 20 and a line connecting thesecond optical head 13B to the center O of the polishing table 20 meetat an angle of substantially 180 degrees. FIG. 14 shows a state in whichthe first optical head 13A is facing the center of the substrate W(described by a solid line) and a state in which the second optical head13B is facing the peripheral portion of the substrate W (described by adotted line). The second optical head 13B is located outwardly of thefirst optical head 13A with respect to the radial direction of thepolishing table 20.

In the above-discussed examples shown in FIG. 7 and FIG. 12, the firstoptical head 13A and the second optical head 13B apply the light to thesubstrate W and receive the light from the substrate W substantiallysimultaneously. In the example shown in FIG. 14, the first optical head13A and the second optical head 13B apply the light to the substrate Wand receive the light from the substrate W at different timings.

As described above, in the arrangement shown in FIG. 14, the filmthickness at the central portion of the substrate W and the filmthickness at the peripheral portion of the substrate W are measured atdifferent times. Therefore, it is possible to use one spectroscope forreceiving both the reflected light from the first optical head 13A andthe reflected light from the second optical head 13B. That is, even ifone spectroscope receives the reflected light from the central portionof the substrate W and the reflected light from the peripheral portionof the substrate W, these reflected lights are not superimposed in thespectroscope. Further, it is also possible to connect one light sourceto the first optical head 13A and the second optical head 13Bselectively. Next, an example having a common spectroscope and a commonlight source will be described with reference to FIG. 15.

As shown in FIG. 15, the first light-applying unit 11 a and the secondlight-applying unit 11 b are coupled to a light source 16 through afirst optical switch 40A. This first optical switch 40A is configured tocouple the light source 16 to one of the first light-applying unit 11 aand the second light-applying unit 11 b selectively. Similarly, thefirst light-receiving unit 12 a and the second light-receiving unit 12 bare coupled to a spectroscope 14 through a second optical switch 40B.The optical switch is a device for switching light-transmission route. Atypical type of optical switch has a mirror for changing a travellingdirection of light and switches the light-transmission route byreflecting incident light. Other than the optical switch using themirror, a waveguide optical switch may be used. This type of opticalswitch uses a material whose index of refraction varies upon input ofheat or electricity. These known optical switches can be used as thefirst optical switch 40A and the second optical switch 40B.

In the above-described structure, when the first optical head 13A movesacross the substrate W, the light source 16 and the spectroscope 14 arecoupled to the first light-applying unit 11 a and the firstlight-receiving unit 12 a by the optical switches 40A and 40B. When thesecond optical head 13B moves across the substrate W, the light source16 and the spectroscope 14 are coupled to the second light-applying unit11 b and the second light-receiving unit 12 b by the optical switches40A and 40B. In this manner, by using the optical switches 40A and 40B,the light source 16 and the spectroscope 14 can be coupled to the firstoptical head 13A or the second optical head 13B alternately.

In the example shown in FIG. 14, the first optical head 13A and thesecond optical head 13B are arranged at substantially equal intervals ina circumferential direction of the polishing table 20, so that the firstoptical head 13A and the second optical head 13B apply the light to thesubstrate W and receive the reflected light from the substrate Walternately at substantially constant time intervals. Therefore, theprocessor 15 can secure a sufficient time for processing the measurementdata (i.e., data containing measured values of the intensity of thereflected light) sent from the spectroscope 14.

While the second optical head 13B is arranged outwardly of the firstoptical head 13A with respect to the radial direction of the polishingtable 20 in the example of FIG. 14, the second optical head 13B may bearranged inwardly of the first optical head 13A with respect to theradial direction of the polishing table 20 as shown in FIG. 16.Specifically, the line connecting the second optical head 13B to thecenter O of the polishing table 20 may be shorter than the lineconnecting the first optical head 13A to the center O of the polishingtable 20. In this case also, the same effects as in the examples shownin FIG. 14 and FIG. 15 can be obtained.

FIG. 17 is a plan view showing still another example of arrangement ofthe first optical head 13A and the second optical head 13B. In thepreviously-discussed example shown in FIG. 14, the first optical head13A and the second optical head 13B are in alignment with each other. InFIG. 17 the second optical head 13B is arranged in a different positionthan a position of the first optical head 13A with respect to thecircumferential direction the polishing table 20. FIG. 17 shows a statein which the first optical head 13A is facing the center of thesubstrate W (described by a solid line) and a state in which the secondoptical head 13B is facing the peripheral portion of the substrate W(described by a dotted line). In this example, the line connecting thefirst optical head 13A to the center O of the polishing table 20 and theline connecting the second optical head 13B to the center O of thepolishing table 20 meet at an angle of about 120 degrees. In thisexample also, the film thickness at the central portion of the substrateW and the film thickness at the peripheral portion of the substrate Ware measured at different times. Therefore, the single light source 16and the single spectroscope 14 can be used for the first optical head13A and the second optical head 13B selectively as shown in FIG. 15.

While the second optical head 13B is arranged outwardly of the firstoptical head 13A with respect to the radial direction of the polishingtable 20 in the example of FIG. 17, the second optical head 13B may bearranged inwardly of the first optical head 13A with respect to theradial direction of the polishing table 20 as shown in FIG. 18.

FIG. 19 is a plan view showing an example in which a third optical head13C is provided in addition to the first optical head 13A and the secondoptical head 13B. The third optical head 13C has the same structure asthe above-discussed first optical head 13A and the second optical head13B. The third optical head 13C is coupled to a light source and aspectroscope (not shown). As shown in FIG. 19, the first optical head13A, the second optical head 13B, and the third optical head 13C arearranged along the radial direction of the polishing table 20. Thesecond optical head 13B and the third optical head 13C are locatedoutwardly of the first optical head 13A.

The arrangement of the first optical head 13A and the second opticalhead 13B is the same as the arrangement shown in FIG. 7. The thirdoptical head 13C is located in an intermediate point between the firstoptical head 13A and the second optical head 13B. Specifically, adistance between the first optical head 13A and the third optical head13C is substantially the same as a distance between the third opticalhead 13C and the second optical head 13B. The position of the thirdoptical head 13C corresponds to an intermediate portion located betweenthe central portion and the peripheral portion of the substrate. Thesecond optical head 13B is located in a position corresponding to theabove-described pressure chamber P4, and the third optical head 13C islocated in a position corresponding to the above-described pressurechamber P2 or the pressure chamber P3. Therefore, a more highly-accuratefilm-thickness profile can be obtained.

FIG. 20 is a plan view showing another example of arrangement of thefirst optical head 13A, the second optical head 13B, and the thirdoptical head 13C. The arrangement shown in FIG. 20 is basically the sameas the arrangement shown in FIG. 19, but differs in that the secondoptical head 13B and the third optical head 13C are located inwardly ofthe first optical head 13A with respect to the radial direction of thepolishing table 20. In this example also, the second optical head 13B islocated in a position corresponding to the peripheral portion of thesubstrate, and the third optical head 13C is located in a positioncorresponding to the intermediate portion located between the centralportion and the peripheral portion of the substrate.

FIG. 21 is a modified example of the arrangement shown in FIG. 19, andFIG. 22 is a view showing a modified example of the arrangement shown inFIG. 20. As shown in FIG. 21 and FIG. 22, the third optical head 13C maybe located closer to the second optical head 13B than to the firstoptical head 13A. According to these arrangements, the film thickness ofthe intermediate portion near the peripheral portion of the substratecan be measured using the third optical head 13C.

FIG. 23 is a plan view showing another example of arrangement of thesecond optical head 13B. In this example, the second optical head 13B isarranged outwardly of the polishing table 20. The position of the firstoptical head 13A is the same as in the above-discussed examples. Theposition of the second optical head 13B is fixed and is supported by asupport member (not shown). The second optical head 13B does not rotatetogether with the polishing table 20. In this example, the top ring 24(see FIG. 6) oscillates in the radial direction of the polishing table20 during polishing as indicated by arrow S such that the peripheralportion of the substrate W protrudes from the polishing pad 22 on thepolishing table 20. Therefore, the second optical head 13B can apply thelight to the exposed peripheral portion of the substrate W and canreceive the reflected light from the substrate W.

FIG. 24 is a plan view showing still another example of arrangement ofthe second optical head 13B. In this example, as shown in FIG. 24, thesecond optical head 13B is located at the center of the polishing table20. The top ring 24 is configured to oscillate in the radial directionof the polishing table 20 as indicated by arrow T such that theperipheral portion of the substrate W is moved to the center of thepolishing table 20. Therefore, in this example also, the second opticalhead 13B can apply the light to the peripheral portion of the substrateW and can receive the reflected light from the substrate W.

FIG. 25 is a cross-sectional view showing a modified example of thepolishing apparatus shown in FIG. 6. In the example shown in FIG. 25,the liquid supply passage, the liquid discharge passage, and the liquidsupply source are not provided. Instead, transparent windows 45A and 45Bare provided in the polishing pad 22. The light-applying units 11 a and11 b direct the light to the surface of the substrate W on the polishingpad 22 through the transparent windows 45A and 45B, and thelight-receiving units 12 a and 12 b receive the reflected light from thesubstrate W through the transparent windows 45A and 45B. The otherstructures are the same as those of the polishing apparatus shown inFIG. 6. The transparent windows 45A and 45B can be applied to theexamples shown in FIG. 7 through FIG. 24.

Although two or three optical heads are provided in the above examples,the present invention is not limited to them. Four or more optical headsmay be provided so long as at least one optical head is arranged so asto face the peripheral portion of the substrate. Moreover, the presentinvention is not limited to the optical film-thickness measuring device,and can be applied to other type of film-thickness measuring device,such as eddy current sensor. For example, according to theabove-discussed examples shown in FIG. 7 through FIG. 24, a first eddycurrent sensor (film-thickness sensor) may be arranged so as to face thecenter of the substrate, and a second eddy current sensor may bearranged so as to face the peripheral portion of the substrate.

The previous description of embodiments is provided to enable a personskilled in the art to make and use the present invention. Moreover,various modifications to these embodiments will be readily apparent tothose skilled in the art, and the generic principles and specificexamples defined herein may be applied to other embodiments. Therefore,the present invention is not intended to be limited to the embodimentsdescribed herein but is to be accorded the widest scope as defined bylimitation of the claims and equivalents.

What is claimed:
 1. A polishing apparatus for polishing a substrate,comprising: a polishing table for holding a polishing pad; a top ringconfigured to press a surface of the substrate against the polishingpad; at least one light source configured to emit light; a first opticalhead configured to apply the light to an area including the center ofthe substrate and to receive reflected light from the substrate whilemoving across the substrate; a second optical head configured to applythe light to a peripheral area of the substrate and to receive reflectedlight from the substrate while moving along the peripheral area of thesubstrate; a liquid supply passage for supplying transparent liquid in ahole formed in the polishing table in which the first optical head andthe second optical head are located; and a spectroscope that isconnected to the first optical head and the second optical head; whereinthe second optical head is located at a position that is not below thesubstrate held by the top ring when the first optical head is located ata position that is below the substrate held by the top ring; wherein thesecond optical head is located inwardly of the first optical head withrespect to the radial direction of the polishing table.
 2. The polishingapparatus according to claim 1, wherein the polishing table is rotatableabout its own axis.
 3. The polishing apparatus according to claim 1,wherein a line connecting the first optical head to the center of thepolishing table and a line connecting the second optical head to thecenter of the polishing table meet at an angle of substantially 180degrees.
 4. The polishing apparatus according to claim 1, wherein a lineconnecting the first optical head to the center of the polishing tableand a line connecting the second optical head to the center of thepolishing table meet at an angle of substantially 120 degrees.
 5. Thepolishing apparatus according to claim 1, wherein the polishing pad hasa through-hole that is connected to the hole of the polishing table. 6.The polishing apparatus according to claim 1, further comprising aliquid discharge passage for expelling transparent liquid supplied tothe hole of the polishing table.
 7. The polishing apparatus according toclaim 1, wherein the transparent liquid is water or pure water.
 8. Thepolishing apparatus according to claim 5, further comprising a valveconfigured to operate in conjunction with the rotation of the polishingtable; wherein the valve operates so as to stop the flow of thetransparent liquid or reduce the flow of the transparent liquid when thesubstrate is not located over the through-hole.
 9. The polishingapparatus according to claim 1, wherein the at least one light source isa single common light source coupled to the first optical head and thesecond optical head.
 10. The polishing apparatus according to claim 9,wherein the single common light source is coupled to the first opticalhead and the second optical head via an optical switch.
 11. Thepolishing apparatus according to claim 1, wherein the peripheral portionof the substrate is an outermost annular portion of the substrate, andthe width of the peripheral portion is in the range of 10 mm to 20 mm.12. The polishing apparatus according to claim 1, wherein the top ringhas a mechanism capable of independently pressing the central portionand the peripheral portion of the substrate, and wherein the polishingapparatus further comprises a controller that determines polishing loadsto the central portion and the peripheral portion of the substrate basedon the thickness of the central portion and the peripheral portion ofthe substrate.